Indium nitride is dark gray powder, which is a new three group nitride material and stable under about 300℃. It is a kind of semiconductor with forbidden bandwidth 2.4eV and formation heat -17.6kJ/mol. It easily dissolve by acid and alkali. Indium(III) oxide is the raw material.
InN is a direct bandgap semiconductor material recognized for its high electron mobility, thermal stability, and tunable bandgap properties, making it an important material in cutting-edg optoelectronics, high-speed electronics, and photovoltaic technologies. With its unique capabilities, InN has become essential for applications that demand efficient light emission, fast signal processing, and renewable energy solutions.
Indium Nitride
| CAS No.:25617-98-5 | EINECS No.:247-130-6 | Molecular Weight:InN | Molecular Weight:128.83 |
| Melting Point:1200℃ | Density:6.88 |
Applications
Indium nitride film by metal organic chemical vapor deposition method owns photoluminescence properties. It get potential application in photoelectronic parts of new high frequency tera hertz communication.
In optoelectronics, InN is highly valued for its ability to emit light in the infrared (IR) spectrum. InN is particularly useful in creating infrared LEDs and laser diodes, which are essential for fiber-optic communication, remote sensing, and medical imaging. Its direct bandgap and compatibility with other III-nitride semiconductors makes it suitable for applications requiring precision and stability in light emission. InN-based devices play a critical role in the development of advanced communication systems and high-resolution IR imaging technologies.
In high-speed electronics, InN’s high electron mobility enables ultra-fast signal processing, making it ideal for nex-generation transistors and h igh-frequency devices. InN’s rapid electron transport characteristics support efficient data transmission and processing, crucial for telecommunications, radar systems, and other high-speed applications. With its low power consumption and high performance, InN is paving the way for faster, more energy-efficient electronic devices in various high-demand sectors.
InN also shows promise in the field of solar energy, particularly in multi-junction solar cells. Due to its bandgap tunability, InN can be integrated into solar cells that capture a broader range of the solar spectrum, enhancing overall efficiency. InN-based solar cells are of interest for terrestrial and space applications where high efficiency and durability are critical for performance.