Indium nitride is dark gray powder, which is a new three group nitride material and stable under about 300℃. It is a kind of semiconductor with forbidden bandwidth 2.4eV and formation heat -17.6kJ/mol. It easily dissolve by acid and alkali. Indium(III) oxide is the raw material.
|CAS No.:25617-98-5||EINECS No.:247-130-6||Molecular Weight:InN||Molecular Weight:128.83|
Indium nitride film by metal organic chemical vapor deposition method owns photoluminescence properties. It get potential application in photoelectronic parts of new high frequency tera hertz communication.