Niobium arsenide is grey powder, which is a semiconductor and photoelectric material. It is also available with lump, chunk and target. Arsenic and niobium are the raw material.
NbAs is a compound semiconductor and a member of the transition metal monopnictides, known for its unique electronic properties, including high electron mobility and low thermal conductivity. NbAs has gained significant attention in recent years due to its status as a topological semimetal, a material that can exhibit exotic quantum states under specific conditions. These qualities make niobium arsenid an exciting candidate for advanced applications in quantum computing, high-speed electronics, and optoelectronics.
Niobium Arsenide
| CAS No.:12255-08-2 | EC No.:235-503-6 | Molecular Formula:NbAs | Density:7.28 |
| NbAs | Cu | Mg | Ni | Bi | In |
| 99.99% | 10ppm | 3ppm | 8ppm | 20ppm | 0.5ppm |
| Fe | Cd | Si | Al | Te | Pb |
| 20ppm | 5ppm | 20ppm | 15ppm | 1ppm | 25ppm |
| NbAs | Cu | Al | Mg | Pb | Fe |
| 99.9% | ≤30ppm | ≤30ppm | ≤20ppm | ≤40ppm | ≤40ppm |
| Bi | Te | Si | S | Na | |
| ≤20ppm | ≤200ppm | ≤20ppm | ≤50ppm | ≤60ppm |
Applicatoins
In quantum computing, NbAs’s unique toplogica characteristics, such as its Weyl semimetal properties, make it valuable for research into robust quantum states that can withstand environmental interference. NbAs holds potential for creating qubits, the fundamental units of quantum computers, in a stable and reliable form. As scientists work towards creating fault-tolerant quantum computing systems, materials like NbAs may play critical role in developing hardware that enables practical, scalable quantum computing.
In high-speed electronics, NbAs’s high electron mobility enables ultra-fast signal transmission, making it suitable for high-frequency circuits and applications that require rapid data processing and low power dissipation. NbAs-based devices are being exlored for high-speed transistors and other comonents in areas like telecommunications, radar systems, and next-generation computing, where speed and energy efficiency are crucial.
In optoelectronics, NbAs shows promise for developing advanced infrared sensors and detectors. Its unique electronic structure allows NbAs to interact effectively with infrared light, making it suitable for specialized optoelectronic applications that require precise IR sensing, such as in environmental monitoring, thermal imaging, and other indsutrial uses.