Beryllium oxide is oxide of beryllium metal, which is highly toxic. It is white loose powder of B4 type crystal. The pure BeO is insulating to electricity, but conduct heat like metals. BeO slowly dissolve in concentrated acid and hydroxide alkaline solution, hardly dissolve in water. After firing it is hardly soluble in above solutions, which is very hard and own ceramic character. Beryllia has two characters, which can react with acid, also with strong base. It is very stable, but if heating with ammonium hydrogen fluoride or sulfuric acid, it decompose easily. Fresh beryllium monoxide tend to react with acid, alkali and ammonium carbonate to form beryllium salt or beryllium acid salts. Beryllium hydroxide is the raw material.
Beryllium Oxide
CAS No.:1304-56-9 | EINECS No.:215-133-1 | Molecular Formula:BeO | Molecular Weight:25.01 |
Melting Point:2530℃ | Boiling Point:3600℃ | Density:2.9 | UN 1566 6.1/PG 2 |
Applications
Beryllia is mainly for preparing beryllium alloys and neon light, which is also raw material for refractory material and catalyst for organic synthesis. It is raw material for high thermal conductive beryllia ceramic material. BeO deposition using the discrete feeding method (DFM) enables low-temperature DF-ThALD. At 150℃, BeO films grown by DF-ThALD exhibit a leakage current density of 3.69×10-6 A/cm2 at -1 MV/cm. Multi-physics anlaysis of fast molten salt reactor with beryllia reflector was conducted using GeN-Foam and OpenMC. Beryallia’s application includes neutronics fields as well as adjoint fields.
In drug field, adsorption of cycloserine (Seromycin) onto a beryllium oxide nano cage serve as potential drug carrier scaffold along with DFT computations. BeO thin films by atomic layer deposition (ALD) extend the use of BeO in semiconductor front-end-of-the-art. It is optimal for nanoscale electronic device applications.
Beryllium oxide nanofibers get potential uses in various industries.