Gallium arsenide is crystal of cubic crystal system, which is an important semiconductor material. It is available in pieces, ingots, rods, powders and wafers. It stable and don’t corrode by non-oxidizing acid under 600℃.GaAs could process into semi-insulating material that is triple electrical resistivity than silicon and germanium, which is for integrated circuit substrate and infrared detector. However it would decompose at high temperature, so the technique is complex to get ideal high purity monocrystal GaAs. Gallium metal and arsenic metal are the raw material.
GaAs is a compound semiconductor known for its high electron mobility, direct bandgap, and superior performance in high-frequency and optoelectronic applications. With these qualities, GaAs is indispensable in areas such as high-speed electronics, solar cells, and advanced optoelectronics, where efficient power handling, speed, and precision are paramount.
Gallium Arsenide
| CAS No.:1303-00-0 | EINECS No.:215-114-8 | Molecular Formula:GaAs | Molecular Weight:144.64 |
| Melting Point:1238℃ | Density:6.307 | UN 1557 6.1/PG 2 | Purity:99.999% |
Applications
Gallium monoarsenide is raw material for processing LCD, LD, FET, HEMT, HBT, MMIC and MIMIC. It is also raw material for high speed integrated circuit and solar battery.
In electronics, GaAs is widely used for high-speed and high-frequency applications. Its ability to handle faster signal transmission than traditional silicon makes GaAs ideal for microwave, radio frequency (RF), and high-frequency integrated circuits (ICs) used in telecommunications, radar systems, and satellite commonication. GaAs-based devices are commonly found in cell phones, wireless networks, and other technologies that require reliable, high-speed data transmission and low noise.
GaAs also plays a significant role in solar technology, especially in high-efficiency solar cells for aerospace and terrstrial applications. GaAs solar cells can achieve impress conversion efficiencies and are highly durable under extreme environmental conditions, making them the material of choice for solar panels used in space missions and high-performance solar applications. Additionally, GaAs solar cells have shown promise in multi-junction cells, which layer multiple semiconductors to capture a broader range of the solar spectrum, further increasing efficiency.
In optoelectronics, GaAs is essential for producing LEDs, laser diodes, and photodetectors. Its direct bandgap allows GaAs to emit and absorb light efficiently, making it ideal for devices that require precise optical performance. GaAs is commonly used in infrared LEDs, fiber-optic communications, barcode scanners, and optical sensors, where clear, efficient light transimission is essential.