Gallium arsenide is crystal of cubic crystal system, which is an important semiconductor material. It is available in pieces, ingots, rods, powders and wafers. It stable and don’t corrode by non-oxidizing acid under 600℃.GaAs could process into semi-insulating material that is triple electrical resistivity than silicon and germanium, which is for integrated circuit substrate and infrared detector. However it would decompose at high temperature, so the technique is complex to get ideal high purity monocrystal GaAs. Gallium metal and arsenic metal are the raw material.
|CAS No.:1303-00-0||EINECS No.:215-114-8||Molecular Formula:GaAs||Molecular Weight:144.64|
|Melting Point:1238℃||Density:6.307||UN 1557 6.1/PG 2||Purity:99.999%|
Gallium monoarsenide is raw material for processing LCD, LD, FET, HEMT, HBT, MMIC and MIMIC. It is also raw material for high speed integrated circuit and solar battery.