Gallium nitride is direct bandgap semiconductor, which is available in powder, wafer, monocrystal, ingot, piece, rod and so on. It is hexagonal crystal. GaN starts to decompose at 1050℃ (2GaN(s)=2Ga(g)+N2(g). It slowly volatilize in nitrogen or helium when temperature is 1000℃, which prove its stability at relatively high temperature. GaN does not decompose in cold water or hot water, dilute or concentrated hydrochloric acid, nitric acid and sulfuric acid, cold 40% HF. It is stable in cold concentrated alkali, but dissolve in alkali when heating. Gallium metal, gallium phosphide or gallium arsenide is the raw material.
Gallium Nitride
CAS No.:25617-97-4 | EC No.:247-129-0 | Molecular Formula:GaN | Molecular Weight:83.73 |
Density:6.1 | Melting Point:800℃ |
Applications
Gallium nitride is raw material for bright blue and green luminescent tube, light sensor, short wavelength laser, microwave power amplifier and transducer. It is also for white light source as fluorescent lamp, electric bulk and so on.