Indium arsenide is minor metal compound III-V semiconductor by forming of indium and arsenic, which is available in granule, piece, ingot, powder, single crystal substrate, wafer and nanowire. It is odorless and silvery gray solid powder or piece at room temperature, which own sphalerite crystal structure. The lattice constant of InAs is 0.6058nm and the density is 5.66g/cm( solid) or 5.90g/cm(at melting point). It can grow to single crystal from melt at room pressure by HB and LEC method usually. InAs is a semiconductor material that is very hard to purify. InAs is insoluble in water. The synthesis of InAs is same as gallium arsenide. It need arsenic powder and indium powder as raw materials.
Purity: 99.99%, 99.999%, 99.9999%
|CAS No.:1303-11-3||EINECS No.:215-115-3||Molecular Formula:InAs||Molecular Weight:189.74|
|Density:5.67||Melting Point:943℃||UN 1557 6.1/PG 3|
InAs uses as electronic material, optical material, catalyst and so on. It applies to hole components and diamagnetic components.