Sputtering targets are an essential component in the process of thin film deposition. They play a cruicial role in various industries, including electronics, semiconductors, displays and optics. Sputtering target materials are usually high-purity metals, alloys, or compounds that are used as the source of material in sputtering deposition. When a high-energy ion beam or plasma hits the target, atoms or molecules are ejected and deposited onto a substrate to form a thin fiml.
There are several types of sputtering target materials available, depending on the application requirements. Common materials include metals (such as aluminum, copper, titanium), alloys (such as stainless steel, nickel alloy), and compounds( such as oxides, nitrides, and carbides.)
High purity is a critical characteristic of sputtering target materials, as it ensures the quality and performance of the resulting thin films. Other important feactures include uniform composition, good crystallinity and mechanical stability.
Sputtering target materials find wide applications in numerous fields. In electronics, they are used in the fabrication of semiconductor devices, magnetic storage media and optical coatings. In display, they are employed in the production of thin film transistors(TFTs) for liquid crystal displays(LCDs). Additionally, they are utillized in solar cells, coatings and decorative coatings.
The sputtering process involves generating a plasma or ion beam, which bombards the target material. The ejected atoms or molecules then deposit onto the substrate to form the thin film. Sputtering equipment typically consists of a vacuum chamber, a power source, a target holder and a substrate stage.
Sputtering offers several advantages, including controlled film thickness, good adhesion and the ability to deposit complex compositions. It allows for the deposition of high-quality thin film with precise control over the properties of the deposited material.
To ensure the quality of sputtering target materials, strict quality control measures are implemented, Shape, and size of the target to achieve desired thin film properties.
Sputtering target materials are essential in the fabrication of thin films with controlled properties. Their high purity and customizable nature make them suitable for a wide range of applications.
Metal Sputtering Targets
Rhenium | Ruthenium | Rhodium | Osmium | Iridium | Silver | Gold |
Alloy Sputtering Targets
Zirconium-Titanium | Indium-Bismuth-Tin | Vanadium-Nickel | Aluminum-Vanadium | Iron-Cobalt-Vanadium | AlCrNbSiTiV | Vanadium-Titanium | VTiCrCe |
Nickel-Copper | Silicon-Aluminum | Nickel-Chromium | Magnesium-Chromium | Molybdenum-Nickel | Tungsten-Rhenium | Tungsten-Titanium | Molybdenum-Rhenium |
Cadmium-Tin | Indium-Silver | CIGS | IGZO | Bismuth-Tellurium-Tin | Bismuth-Tin | Nickel-Antimony | Manganese-Antimony |
Silicon-Germanium | Lithium-Niobium |
Zirconium-Yttrium | Scandium-Aluminum | Scandium-Magnesium | Molybdenum-Lanthanum | Cerium-Magnesium | Neodymium-Aluminum | Samarium-Cobalt | Gadolinium-Magnesium |
Aluminum-Erbium | Nickel-Yttrium | Titanium-Yttrium | Cobalt-Yttrium | Silver-Yttrium | Neodymium-Iron-Boron | Terbium-Dysprosium-Iron |
Nickel-Platinum | Tungsten-Rhenium | Iridium-Rhenium | Platinum-Iridium | Molybdenum-Rhenium | Iridium-Ruthenium | Platinum-Rhodium | Nickel-Iridium |
Copper-Iridium | Iridium-Manganese | Indium-Silver | Indium-Copper-Silver | Gold-Germanium | Gold-Beryllium |
Metal Compound Sputtering Targets
Antimony Tin Oxide | Indium Tin Oxide | IGZO | Bismuth Oxide | LASPO | LSFCO | LSMO | Zirconium Oxide |
SrCuO2 | Hafnium Oxide | NSMO | Indium Oxide | Titanium Pentoxide | Zinc Oxide | Strontium Ruthenium Oxide |
Lithium Titanate | Lithium Cobaltate | Lithium Tungstate | Silicon Lithium Phosphate | Lithium Manganate | Lithium Tantalate | Lithium Vanadate | Lithium Aluminum Silicate |
Lithium Metavanadate | Lithium Fluoride | Lithium Niobate | Lithium Iron Phosphate | Lithium Lanthanum Titanate | Strontium Titanate | LSM | Strontium Ferrite |
LSMS | SrBaTiO3 | LaSrCO3 | SrVO3 | Zirconium Boride | Zirconium Carbide | NSMO | Lead Zirconate Titanate |
SrZrO3 | Hafnium Carbide | Hafnium Iodide | Hafnium Silicate | Hafnium Boride | Bismuth Vanadate | (Na3V2(PO4))3 | Cadmium Sulfide |
Cadmium Telluride | Cadmium Selenide | Zinc Telluride | Indium Selenide | Bismuth Ferrite | Antimony Telluride | Bi3.25L0.75Ti3O12 | Bi5Ti3Fe0.7Co0.3)15 |
Antimony Selenide | Antimony Bismuth Telluride | Gallium Selenide | Germanium Telluride | Germanium Antimony Telluride | Gallium Arsenide | Arsenic Telluride | Copper Selenide |
Antimony Selenide | Molybdenum Telluride | LaSrMnO3 | Bismuth Selenide | SrBi2Ta2O9 | Antimony Sulfide | Li1.5Al0.5Ge1.5(PO4)3 | Bismuth Telluride |
Lithium Lanthanum Titanate | Lanthanum Metavanadate | Bi3.25La0.75Ti3O12 | NBT-BT | Yttrium Ferrite | Thulium Ferrite | Samarium Nickelate | Praseodymium Titanate |
LaSrMnO3 | Ta0.2-La6.75La3Zr1.75O12 | La0.25-Li6.76La3Zr1.76O12 | Lanthanum Nickelate | Scandium Trioxide | Yttrium Oxide | Gadolinium Oxide | Terbium Oxide |
Strontium Ruthenium Oxide | SrRuO3 |